Fujitsu, established in 1935 in Japan, is one of the world's largest IT providers (and the largest one in Japan), with a turnover of $41 billion in 2015. The company is involved with many industries - including semiconductor production.
4DS Memory, based in Australia, develops non-filamentary RRAM based memory for next generation storage devices. The company owns an IP portfolio developed in house to create high density gigabyte storage.
In 2014, 4DS signed a joint-development agreement with HGST, a Western Digital subsidiary, to optimize 4DS's technology for the gigabyte storage market. The agreement was renewed in July 2016 for a further 12-month commitment. In October 2016 4DS announced it developed a 40nm working RRAM cell, and in November 2017 4DS announced a collaboration with imec to develop a manufacturing process for its technology.
SanDisk, owned by Western Digital is a leading Multinational flash memory developer that provides flash memory storage solutions for data centers and mobile devices. The company also develops RRAM memory technologies.
In 2015 SanDisk signed a long-term partnership with HP to co-develop RRAM technologies and expects RRAM products to enter the enterprise storage market by 2018.
Adesto was established in 2007 to develop a low-power RRAM-memory type called Conductive Bridging RAM (CBRAM). Adesto's is already shipping CBRAM chips, targeting the EEPROM and NOR flash markets.
Adesto also offers flash memory products following the acquisition's of Ateml's DataFlash and Serial Flash product lines in 2012.
Panasonic Corporation (which until October 2008 was known as Matsushita Electric Industrial) provides a wide range of products, from audiovisual and information equipment to home appliances and components.
Panasonic is one of the leaders in RRAM development. The company launched RRAM evaluation kits in 2012. In 2013, Panasonic launched 8-bit MCUs with 64Kb ReRAM (the MN101L series).
Crossbar Inc is a private company based in California, USA, that develops proprietary RRAM-based memory technology. Crossbar's RRAM is based on non-conductive amorphous silicon (a-Si) as the host material for a metallic filament formation, and the switching mechanism is based on an electric field.
Crossbar's technology is based on a simple device structure that uses CMOS-friendly materials and standard manufacturing processes. The Crossbar RRAM can be stacked in 3D. In March 2016 the company signed a strategic partnership agreement with SMIC.